IXBH16N170

new-10%

Manufacturer part number:IXBH16N170

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.7KV 40A 3-Pin(3+Tab) TO-247AD

Case Package:SOT-23

Datasheet:IXBH16N170 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2008
Series	BIMOSFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.7kV
Max Power Dissipation	250W
Current Rating	16A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	150W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	15 ns
Power - Max	250W
Transistor Application	POWER CONTROL
Rise Time	25ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	160 ns
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	40A
Reverse Recovery Time	1.32 μs
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Turn On Time	220 ns
Vce(on) (Max) @ Vge, Ic	3.3V @ 15V, 16A
Turn Off Time-Nom (toff)	940 ns
Gate Charge	72nC
Current - Collector Pulsed (Icm)	120A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free