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IKQ100N60TXKSA1

IKQ100N60TXKSA1

IKQ100N60TXKSA1

Infineon Technologies

IKQ100N60TXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKQ100N60TXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2009
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 714W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 714W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 160A
Reverse Recovery Time 230 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 83 ns
Test Condition 400V, 100A, 3.6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 100A
Turn Off Time-Nom (toff) 393 ns
IGBT Type Trench Field Stop
Gate Charge 610nC
Current - Collector Pulsed (Icm) 400A
Td (on/off) @ 25°C 30ns/290ns
Switching Energy 3.1mJ (on), 2.5mJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.689280 $8.68928
10 $8.197434 $81.97434
100 $7.733428 $773.3428
500 $7.295687 $3647.8435
1000 $6.882724 $6882.724
IKQ100N60TXKSA1 Product Details

IKQ100N60TXKSA1 Description


IKQ100N60TXKSA1 is a single IGBT with a breakdown voltage of 600V from Infineon Technologies. IKQ100N60TXKSA1 operates between -40°C~175°C TJ, and its maximum collector current is 160A. The IKQ100N60TXKSA1 has three pins and it is available in tube packaging way. IKQ100N60TXKSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.



IKQ100N60TXKSA1 Features


  • Positive temperature coefficient in VCE(sat)

  • Low EMI

  • Low gate charge QG

  • Increased current capability

  • Green package

  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode



IKQ100N60TXKSA1 Applications


  • General purpose inverters

  • Uninterruptible power supplies

  • Motor drives

  • Medium to low switching frequency power converters


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