IKP15N60TXKSA1                  Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

IKP15N60TXKSA1                  Features

· Very low VCE(sat) 1.5V (typ.)

· Maximum Junction Temperature 175°C

· Short circuit withstand time 5ms

· Designed for :

- Frequency Converters

- Uninterrupted Power Supply

· TRENCHSTOP? and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

· Positive temperature coefficient in VCE(sat)

· Low EMI

· Pb-free lead plating; RoHS compliant

· Very soft, fast recovery anti-parallel Emitter Controlled

IKP15N60TXKSA1                  Applications

? Solar Inverters

? Uninterruptible Power Supplies (UPS)

? Welding