FGA40T65SHDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGA40T65SHDF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Weight
6.401g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2016
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
HTS Code
8541.29.00.95
Max Power Dissipation
268W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
268W
Collector Emitter Voltage (VCEO)
1.81V
Max Collector Current
80A
Reverse Recovery Time
101 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.81V
Test Condition
400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.81V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
68nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
18ns/64ns
Switching Energy
1.22mJ (on), 440μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
450
$3.23169
$1454.2605
FGA40T65SHDF Product Details
FGA40T65SHDF Description
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for resonant or soft switching applications such as induction heating and MWO.
FGA40T65SHDF Features
Maximum Junction Temperature : TJ = 175oC
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A