AIGW40N65H5XKSA1 Description

AIGW40N65H5XKSA1 is a single IGBT from the manufacturer Infineon Technologies with the break down voltage of 650V. The operating temperature of AIGW40N65H5XKSA1 is -40°C~175°C TJ and its Current - Collector (Ic) (Max) is 8.2A. AIGW40N65H5XKSA1 has 3 pins and it is available in Tube packaging way. The Voltage - Collector Emitter Breakdown (Max) of AIGW40N65H5XKSA1 is 650V.

AIGW40N65H5XKSA1 Features

• Best-in-Class efficiency in hard switching and resonant topologies

• Plug and play replacement of previous generation IGBTs

• 650V breakdown voltage

• Low gate charge QG

• Maximum junction temperature 175°C

• Dynamically stress tested

• Qualified according to AEC-Q101

• Green package (RoHScompliant)

AIGW40N65H5XKSA1 Applications

• Off-board charger

• On-board charger

• DC/DC converter

• Power-Factor correction