FGA30N60LSDTU

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Manufacturer part number:FGA30N60LSDTU

Manufacturer:ON Semiconductor

Description:FGA30N60LSDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA30N60LSDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	480W
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	480W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	35 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	62 ns
Test Condition	400V, 30A, 6.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.4V @ 15V, 30A
Turn Off Time-Nom (toff)	2870 ns
IGBT Type	Trench Field Stop
Gate Charge	225nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	18ns/250ns
Switching Energy	1.1mJ (on), 21mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
Fall Time-Max (tf)	2000ns
Height	18.9mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant