FGH25T120SMD-F155

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Manufacturer part number:FGH25T120SMD-F155

Manufacturer:ON Semiconductor

Description:FGH25T120SMD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH25T120SMD-F155 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	428W
Peak Reflow Temperature (Cel)	260
Number of Elements	1
Element Configuration	Single
Power Dissipation	428W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
Reverse Recovery Time	60ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	88 ns
Test Condition	600V, 25A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 25A
Turn Off Time-Nom (toff)	584 ns
IGBT Type	Trench Field Stop
Gate Charge	225nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	40ns/490ns
Switching Energy	1.74mJ (on), 560μJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	7.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant