RGT8NS65DGTL

new-10%

Manufacturer part number:RGT8NS65DGTL

Manufacturer:ROHM Semiconductor

Description:IGBT 650V 8A 65W TO-263S

Case Package:SOT-23

Datasheet:RGT8NS65DGTL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.946308g
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Power Dissipation	65W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	65W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	8A
Reverse Recovery Time	40 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.65V
Max Breakdown Voltage	650V
Turn On Time	54 ns
Test Condition	400V, 4A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Continuous Collector Current	4A
Turn Off Time-Nom (toff)	158 ns
IGBT Type	Trench Field Stop
Gate Charge	13.5nC
Current - Collector Pulsed (Icm)	12A
Td (on/off) @ 25°C	17ns/69ns
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant