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RGT8NS65DGTL

RGT8NS65DGTL

RGT8NS65DGTL

ROHM Semiconductor

IGBT 650V 8A 65W TO-263S

SOT-23

RGT8NS65DGTL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.946308g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Power Dissipation 65W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 65W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 8A
Reverse Recovery Time 40 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.65V
Max Breakdown Voltage 650V
Turn On Time 54 ns
Test Condition 400V, 4A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Continuous Collector Current 4A
Turn Off Time-Nom (toff) 158 ns
IGBT Type Trench Field Stop
Gate Charge 13.5nC
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 17ns/69ns
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.306000 $1.306
10 $1.232075 $12.32075
100 $1.162335 $116.2335
500 $1.096543 $548.2715
1000 $1.034474 $1034.474

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