AIKB30N65DH5ATMA1 Description

AIKB30N65DH5ATMA1 is a single IGBT from the manufacturer Infineon Technologies with the  Collector Emitter Breakdown voltage of AIKB30N65DH5ATMA1 is 650V. AIKB30N65DH5ATMA1 has 2 pins and it is available in TO-263-3 packaging way. The IGBT Type of AIKB30N65DH5ATMA1 is NPT and its maximum collector current is 30A.

AIKB30N65DH5ATMA1 Features

• Best-in-Class efficiency in hard switching and resonant topologies

• Plug and play replacement of previous generation IGBTs

• 650V breakdown voltage

• Low gate charge QG

• IGBT copacked with RAPID1 fast and soft antiparallel diode

• Maximum junction temperature 175°C

• Dynamic ally stress tested

• Qualified according to AEC-Q101

• Green package (RoHS compliant)

AIKB30N65DH5ATMA1 Applications

• Off-board charger

• On-board charger

• DC/DC converter

• Power-Factor correction