FGB40N6S2 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGB40N6S2 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
TO-263AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
290W
Current Rating
75A
Base Part Number
FGB40N6
Element Configuration
Single
Power Dissipation
290W
Input Type
Standard
Power - Max
290W
Rise Time
10ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
75A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
75A
Collector Emitter Saturation Voltage
1.9V
Test Condition
390V, 20A, 3Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 20A
Gate Charge
35nC
Current - Collector Pulsed (Icm)
180A
Td (on/off) @ 25°C
8ns/35ns
Switching Energy
115μJ (on), 195μJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$18.828160
$18.82816
10
$17.762415
$177.62415
100
$16.756995
$1675.6995
500
$15.808486
$7904.243
1000
$14.913666
$14913.666
FGB40N6S2 Product Details
FGB40N6S2 Description
FGB40N6S2 belongs to the family of SMPS II Series N-Channel IGBTs with lower gate charge, plateau voltage, and avalanche capability, which is manufactured by ON Semiconductor for high-voltage switched-mode power supply applications requiring low conduction loss, fast switching times, and high UIS capability. IGBT FGB40N6S2 is able to shorten delay times and reduce the power requirement of the gate drive.