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SGP13N60UFTU

SGP13N60UFTU

SGP13N60UFTU

ON Semiconductor

SGP13N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGP13N60UFTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 60W
Current Rating 6.5A
Base Part Number SG*13N60
Element Configuration Single
Power Dissipation 60W
Input Type Standard
Power - Max 60W
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 13A
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 13A
Collector Emitter Saturation Voltage 2.1V
Test Condition 300V, 6.5A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Gate Charge 25nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 20ns/70ns
Switching Energy 85μJ (on), 95μJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.181034 $0.181034
10 $0.170787 $1.70787
100 $0.161120 $16.112
500 $0.152000 $76
1000 $0.143396 $143.396
SGP13N60UFTU Product Details

SGP13N60UFTU Description


Insulated Gate Bipolar Transistors (IGBTs) from Fairchild's UF series have minimal conduction and switching losses. The UF series is intended for uses where high speed switching is necessary, such as motor control and general inverters.



SGP13N60UFTU Features


  • Accelerated switching

  • Low saturation voltage: 2.1 V at 6.5 A for VCE(sat).

  • Large input resistance



SGP13N60UFTU Applications


Switching applications


Related Part Number

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