HGT1S12N60A4DS

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Manufacturer part number:HGT1S12N60A4DS

Manufacturer:ON Semiconductor

Description:HGT1S12N60A4DS datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGT1S12N60A4DS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Max Power Dissipation	167W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	HGT1S12N60
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	167W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	17 μs
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	96 μs
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	54A
Reverse Recovery Time	30ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.7V
Turn On Time	33 ns
Test Condition	390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Turn Off Time-Nom (toff)	180 ns
Gate Charge	78nC
Current - Collector Pulsed (Icm)	96A
Td (on/off) @ 25°C	17ns/96ns
Switching Energy	55μJ (on), 50μJ (off)
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free