STGW30NC120HD

new-10%

Manufacturer part number:STGW30NC120HD

Manufacturer:STMicroelectronics

Description:STGW30NC120HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW30NC120HD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	220W
Current Rating	30A
Base Part Number	STGW30
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	220W
Input Type	Standard
Turn On Delay Time	29 ns
Transistor Application	POWER CONTROL
Rise Time	11ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	275 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	60A
Reverse Recovery Time	152ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.75V
Turn On Time	41 ns
Test Condition	960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 20A
Continuous Collector Current	30A
Turn Off Time-Nom (toff)	928 ns
Gate Charge	110nC
Td (on/off) @ 25°C	29ns/275ns
Switching Energy	1.66mJ (on), 4.44mJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	5.75V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free