FGY40T120SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGY40T120SMD Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Weight
7.629g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Max Power Dissipation
882W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
882W
Collector Emitter Voltage (VCEO)
2.4V
Max Collector Current
80A
Reverse Recovery Time
65 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
370nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
40ns/475ns
Switching Energy
2.7mJ (on), 1.1mJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$12.07000
$12.07
10
$10.94400
$109.44
450
$8.74124
$3933.558
900
$8.00698
$7206.282
FGY40T120SMD Product Details
FGY40T120SMD IGBT Description
The FGY40T120SMD IGBT finds its wide uses in many applications including PFC, UPS, etc. This switching device adopts Onsemi's Field Stop Trench technology and has great switching characteristics in terms of turn-on delay time, turn-off delay time, total gate charge, and many more. Besides, it is capable of operating under a wide range of temperatures.
FGY40T120SMD IGBT Features
FS Trench Technology, Positive Temperature Coefficient
Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A