STGW15H120DF2 Description

STGW15H120DF2, a part of the new HB series of IGBTs, is a type of  IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high frequency converters. Safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution. The STGW15H120DF2 is embedded in the TO247 package for the purpose of saving board space.

STGW15H120DF2 Features

Advanced proprietary trench gate field-stop structure

PositiveVCE(sat) temperature coefficient 

Very tight parameter distribution

Package: TO247

Low thermal resistance

STGW15H120DF2 Applications

Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

High frequency converters