NGTB30N60IHLWG

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Manufacturer part number:NGTB30N60IHLWG

Manufacturer:ON Semiconductor

Description:NGTB30N60IHLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB30N60IHLWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Number of Pins	3
Weight	6.500007g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Pin Count	3
Element Configuration	Single
Input Type	Standard
Power - Max	250W
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	400 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 30A
IGBT Type	Trench Field Stop
Gate Charge	130nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	70ns/140ns
Switching Energy	280μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	21.08mm
Length	16.26mm
Width	5.3mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free