AUIRFL024NTR

new-10%

Manufacturer part number:AUIRFL024NTR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 2.8A SOT-223

Case Package:SOT-23

Datasheet:AUIRFL024NTR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Case Connection	DRAIN
Turn On Delay Time	8.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.8A Ta
Gate Charge (Qg) (Max) @ Vgs	18.3nC @ 10V
Rise Time	13.4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	17.7 ns
Turn-Off Delay Time	22.2 ns
Continuous Drain Current (ID)	2.8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.0028A
Drain-source On Resistance-Max	0.075Ohm
Drain to Source Breakdown Voltage	55V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant