STGWT60H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWT60H65FB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.756003g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
375W
Base Part Number
STGWT60
Element Configuration
Single
Input Type
Standard
Power - Max
375W
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
80A
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.6V
Test Condition
400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 60A
IGBT Type
Trench Field Stop
Gate Charge
306nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
51ns/160ns
Switching Energy
1.09mJ (on), 626μJ (off)
Height
20.1mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.554265
$5.554265
10
$5.239873
$52.39873
100
$4.943277
$494.3277
500
$4.663468
$2331.734
1000
$4.399498
$4399.498
STGWT60H65FB Product Details
STGWT60H65FB Description
STGWT60H65FB is a 650v Trench gate field-stop IGBT. The STGWT60H65FB is an IGBT device developed using an advanced proprietary trench gate and field-stop structure. The STGWT60H65FB is a part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.