IXGX55N120A3H1

new-10%

Manufacturer part number:IXGX55N120A3H1

Manufacturer:IXYS

Description:IXYS IXGX55N120A3H1 IGBT 1200V

Case Package:SOT-23

Datasheet:IXGX55N120A3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Packaging	Tube
Published	2012
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	ULTRA FAST, LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	460W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	460W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	125A
Reverse Recovery Time	200 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	70 ns
Test Condition	960V, 55A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 55A
Turn Off Time-Nom (toff)	1253 ns
IGBT Type	PT
Gate Charge	185nC
Current - Collector Pulsed (Icm)	400A
Td (on/off) @ 25°C	23ns/365ns
Switching Energy	5.1mJ (on), 13.3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant