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IKW75N65ES5XKSA1

  • IKW75N65ES5XKSA1
  • IKW75N65ES5XKSA1

IKW75N65ES5XKSA1

IKW75N65ES5XKSA1

Infineon Technologies

IKW75N65ES5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW75N65ES5XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 395W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 395W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 85 ns
Collector Emitter Breakdown Voltage 650V
Turn On Time 94 ns
Test Condition 400V, 75A, 18 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 75A
Turn Off Time-Nom (toff) 233 ns
IGBT Type Trench
Gate Charge 164nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 40ns/144ns
Switching Energy 2.4mJ (on), 950μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.71000 $7.71
10 $7.02000 $70.2
240 $5.90542 $1417.3008
720 $5.21278 $3753.2016
1,200 $4.61048 $4.61048
IKW75N65ES5XKSA1 Product Details

IKW75N65ES5XKSA1 Description


RAPID 1 fast and soft antiparallel diode and TRENCHSTOPTM 5 high speed soft switching IGBT are copackaged with full current ratings.



IKW75N65ES5XKSA1 Features


  • Device for harsh and gentle switching with high speed and smoothness

  • 1.42V at nominal current, very low Vcesw

  • Plug-and-play replacement for IGBTs from earlier generations

  • Breakdown voltage of 650V

  • Quadratic gate charge

  • Full-rated RAPID 1 rapid antiparallel diode and IGBT copacked

  • 175°C is the maximum junction temperature

  • JEDEC-qualified for the intended applications



IKW75N65ES5XKSA1 Applications


  • Converters that resonant

  • Supplies with no interruptions

  • Converters for welding

  • Switching frequency converters with a mid-to-high frequency range

  • Pb-free lead plating; complies with RoHS


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