IXYH40N120B3D1

new-10%

Manufacturer part number:IXYH40N120B3D1

Manufacturer:IXYS

Description:IGBT 1200V 86A 480W TO247

Case Package:SOT-23

Datasheet:IXYH40N120B3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	480W
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	22 ns
Power - Max	480W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	177 ns
Collector Emitter Voltage (VCEO)	2.9V
Max Collector Current	86A
Reverse Recovery Time	100 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	84 ns
Test Condition	600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 40A
Turn Off Time-Nom (toff)	411 ns
Gate Charge	87nC
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	22ns/177ns
Switching Energy	2.7mJ (on), 1.6mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free