IRGB4630DPBF Description

IRGB4630DPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide high efficiency in a wide range of applications. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tight distribution of parameters. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications. Improved Reliability can be ensured due to rugged hard switching performance and higher power capability.

IRGB4630DPBF Features

Square RBSOA

Positive VCE(ON) temperature coefficient

Low VCE(ON) and switching losses

Maximum junction temperature 175°C

5μs short circuit SOA

IRGB4630DPBF Applications

 Industrial motor drive

Inverters

UPS

Welding