SI1469DH-T1-E3

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SI1469DH-T1-E3

Manufacturer part number:SI1469DH-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 2.7A SC70-6

Case Package:SOT-23

Datasheet:SI1469DH-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	7.512624mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	80mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta 2.78W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.7A Tc
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 4.5V
Rise Time	20ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	1.6A
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3.2A
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	8A
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free