AUIRLS3036-7P

new-10%

Manufacturer part number:AUIRLS3036-7P

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 300A D2PAK-7P

Case Package:SOT-23

Datasheet:AUIRLS3036-7P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Power Dissipation-Max	380W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	380W
Case Connection	DRAIN
Turn On Delay Time	81 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.9m Ω @ 180A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11270pF @ 50V
Current - Continuous Drain (Id) @ 25°C	240A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 4.5V
Rise Time	540ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	89 ns
Continuous Drain Current (ID)	240A
Threshold Voltage	1V
JEDEC-95 Code	TO-263CB
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	300 mJ
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant