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AUIRLL2705

AUIRLL2705

AUIRLL2705

Infineon Technologies

AUIRLL2705 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRLL2705 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Single
Power Dissipation-Max 1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.2A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 5.2A
RoHS Status RoHS Compliant
AUIRLL2705 Product Details

AUIRLL2705 Description


AUIRLL2705 is a kind of well-known HEXFET? power MOSFET provided by Infineon Technologies. Based on the latest processing techniques, it is able to achieve low on-resistance per silicon area. Moreover, fast switching speed and ruggedized device design are provided by this electronic device. As a result, it is efficient and reliable for electronic designers to use in a wide range of applications.



AUIRLL2705 Features


  • Low on-resistance per silicon area

  • Latest processing techniques

  • Fast switching speed

  • Ruggedized device design

  • Available in the SOT-223 package



AUIRLL2705 Applications


  • Synchronous rectification

  • Uninterruptible power supplies

  • Switching applications


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