SI7403BDN-T1-E3

new-10%

Manufacturer part number:SI7403BDN-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 8A 1212-8

Case Package:SOT-23

Datasheet:SI7403BDN-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Power Dissipation-Max	3.1W Ta 9.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	74m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 10V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Rise Time	51ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	-8A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.074Ohm
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	20A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant