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IRF6603TR1

IRF6603TR1

IRF6603TR1

Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET

SOT-23

IRF6603TR1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MT
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.6W Ta 42W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6590pF @ 15V
Current - Continuous Drain (Id) @ 25°C 27A Ta 92A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -12V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.108861 $1.108861
10 $1.046096 $10.46096
100 $0.986882 $98.6882
500 $0.931021 $465.5105
1000 $0.878321 $878.321

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