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MJW21194G

MJW21194G

MJW21194G

ON Semiconductor

MJW21194G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJW21194G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation200W
Peak Reflow Temperature (Cel) 260
Current Rating16A
Frequency 4MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage250V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage1.4V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 21.08mm
Length 16.26mm
Width 5.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1340 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.31000$4.31
30$3.66200$109.86
120$3.17367$380.8404
510$2.70165$1377.8415

MJW21194G Product Details

MJW21194G Overview


This device has a DC current gain of 20 @ 8A 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1.4V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 3.2A, 16A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (16A).As a result, the part has a transition frequency of 4MHz.When collector current reaches its maximum, it can reach 16A volts.

MJW21194G Features


the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz

MJW21194G Applications


There are a lot of ON Semiconductor MJW21194G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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