FJV1845EMTF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 1mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of 70mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Breakdown input voltage is 120V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.

FJV1845EMTF Features

the DC current gain for this device is 400 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz

FJV1845EMTF Applications

There are a lot of ON Semiconductor FJV1845EMTF applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface