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FJV1845EMTF

FJV1845EMTF

FJV1845EMTF

ON Semiconductor

FJV1845EMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJV1845EMTF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 120V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 50mA
Frequency 100MHz
Base Part Number FJV1845
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 1mA 6V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage 70mV
Max Breakdown Voltage 120V
Frequency - Transition 110MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Height 1.04mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.046893 $0.046893
500 $0.034480 $17.24
1000 $0.028733 $28.733
2000 $0.026361 $52.722
5000 $0.024636 $123.18
10000 $0.022918 $229.18
15000 $0.022164 $332.46
50000 $0.021793 $1089.65
FJV1845EMTF Product Details

FJV1845EMTF Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 1mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of 70mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Breakdown input voltage is 120V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.

FJV1845EMTF Features


the DC current gain for this device is 400 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz

FJV1845EMTF Applications


There are a lot of ON Semiconductor FJV1845EMTF applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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