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ZXTP25020CFHTA

ZXTP25020CFHTA

ZXTP25020CFHTA

Diodes Incorporated

ZXTP25020CFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP25020CFHTA Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.81W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 285MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP25020C
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.81W
Power - Max 1.25W
Transistor Application SWITCHING
Gain Bandwidth Product 285MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 210mV @ 200mA, 4A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 285MHz
Collector Emitter Saturation Voltage -150mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) -7V
hFE Min 85
Continuous Collector Current -4A
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.057600 $0.0576
500 $0.042353 $21.1765
1000 $0.035294 $35.294
2000 $0.032380 $64.76
5000 $0.030262 $151.31
10000 $0.028150 $281.5
15000 $0.027225 $408.375
50000 $0.026770 $1338.5
ZXTP25020CFHTA Product Details

ZXTP25020CFHTA Overview


This device has a DC current gain of 200 @ 10mA 2V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of -150mV.When VCE saturation is 210mV @ 200mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.In the part, the transition frequency is 285MHz.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 4A volts.

ZXTP25020CFHTA Features


the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 210mV @ 200mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 285MHz

ZXTP25020CFHTA Applications


There are a lot of Diodes Incorporated ZXTP25020CFHTA applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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