ZXTP25020CFHTA Overview
This device has a DC current gain of 200 @ 10mA 2V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of -150mV.When VCE saturation is 210mV @ 200mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.In the part, the transition frequency is 285MHz.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTP25020CFHTA Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 210mV @ 200mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 285MHz
ZXTP25020CFHTA Applications
There are a lot of Diodes Incorporated ZXTP25020CFHTA applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
