BD13910S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD13910S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.25W
Current Rating
1.5A
Base Part Number
BD139
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.25W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.464812
$8.464812
10
$7.985672
$79.85672
100
$7.533653
$753.3653
500
$7.107219
$3553.6095
1000
$6.704924
$6704.924
BD13910S Product Details
BD13910S Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.The maximum collector current is 1.5A volts.
BD13910S Features
the DC current gain for this device is 63 @ 150mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 1.5A a transition frequency of 250MHz
BD13910S Applications
There are a lot of ON Semiconductor BD13910S applications of single BJT transistors.