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BD139G

BD139G

BD139G

ON Semiconductor

BD139G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD139G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation1.25W
Peak Reflow Temperature (Cel) 260
Current Rating1.5A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD139
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10390 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.57000$0.57
10$0.48700$4.87
100$0.36610$36.61
500$0.28992$144.96

BD139G Product Details

BD139G Overview


This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

BD139G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A

BD139G Applications


There are a lot of ON Semiconductor BD139G applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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