BC850CWH6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.The maximum collector current is 100mA volts.
BC850CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
BC850CWH6327XTSA1 Applications
There are a lot of Infineon Technologies BC850CWH6327XTSA1 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
