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FZT751TA

FZT751TA

FZT751TA

Diodes Incorporated

FZT751TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT751TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT751
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Voltage 60V
Element Configuration Single
Current 3A
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage -450mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Continuous Collector Current -3A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.88000 $0.88
500 $0.8712 $435.6
1000 $0.8624 $862.4
1500 $0.8536 $1280.4
2000 $0.8448 $1689.6
2500 $0.836 $2090
FZT751TA Product Details

FZT751TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.As it features a collector emitter saturation voltage of -450mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -3A to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.There is a transition frequency of 140MHz in the part.There is a breakdown input voltage of 60V volts that it can take.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

FZT751TA Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -450mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 140MHz

FZT751TA Applications


There are a lot of Diodes Incorporated FZT751TA applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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