FZT751TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT751TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2013
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT751
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Voltage
60V
Element Configuration
Single
Current
3A
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
-450mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Continuous Collector Current
-3A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.88000
$0.88
500
$0.8712
$435.6
1000
$0.8624
$862.4
1500
$0.8536
$1280.4
2000
$0.8448
$1689.6
2500
$0.836
$2090
FZT751TA Product Details
FZT751TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.As it features a collector emitter saturation voltage of -450mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -3A to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.There is a transition frequency of 140MHz in the part.There is a breakdown input voltage of 60V volts that it can take.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
FZT751TA Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of -450mV the vce saturation(Max) is 600mV @ 300mA, 3A the emitter base voltage is kept at 5V the current rating of this device is -3A a transition frequency of 140MHz
FZT751TA Applications
There are a lot of Diodes Incorporated FZT751TA applications of single BJT transistors.