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2N4240

  • 2N4240
  • 2N4240

2N4240

2N4240

Microsemi Corporation

2N4240 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N4240 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-66
Number of Pins 3
Packaging Bulk
Published 1999
Part Status Active
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 35W
Number of Elements 1
Polarity NPN
Power Dissipation 35W
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 2A
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $37.56380 $3756.38
2N4240 Product Details

2N4240 Overview


Keeping the emitter base voltage at 6V allows for a high level of efficiency.The maximum collector current is 2A volts.

2N4240 Features


the emitter base voltage is kept at 6V

2N4240 Applications


There are a lot of Microsemi Corporation 2N4240 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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