MMBT3904 RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
MMBT3904 RFG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Operating Temperature
-55°C~150°C TJ
Packaging
Digi-Reel®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
300mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.317664
$0.317664
10
$0.299683
$2.99683
100
$0.282720
$28.272
500
$0.266717
$133.3585
1000
$0.251620
$251.62
MMBT3904 RFG Product Details
MMBT3904 RFG Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).SOT-23 is the supplier device package for this product.The device has a 40V maximal voltage - Collector Emitter Breakdown.
MMBT3904 RFG Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 300mV @ 5mA, 50mA the supplier device package of SOT-23
MMBT3904 RFG Applications
There are a lot of Taiwan Semiconductor Corporation MMBT3904 RFG applications of single BJT transistors.