KSC1008CYTA Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.The emitter base voltage can be kept at 8V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.50MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 60V volts.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.
KSC1008CYTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008CYTA Applications
There are a lot of ON Semiconductor KSC1008CYTA applications of single BJT transistors.
- Driver
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- Muting
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- Inverter
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- Interface
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