BC858BWH6327XTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 250MHz.Collector current can be as low as 100mA volts at its maximum.
BC858BWH6327XTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BC858BWH6327XTSA1 Applications
There are a lot of Infineon Technologies BC858BWH6327XTSA1 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
