Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BC858BWH6327XTSA1

BC858BWH6327XTSA1

BC858BWH6327XTSA1

Infineon Technologies

BC858BWH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC858BWH6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC858
Number of Elements 1
Configuration SINGLE
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.342170 $0.34217
10 $0.322802 $3.22802
100 $0.304530 $30.453
500 $0.287293 $143.6465
1000 $0.271031 $271.031
BC858BWH6327XTSA1 Product Details

BC858BWH6327XTSA1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 250MHz.Collector current can be as low as 100mA volts at its maximum.

BC858BWH6327XTSA1 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

BC858BWH6327XTSA1 Applications


There are a lot of Infineon Technologies BC858BWH6327XTSA1 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News