BCP5310E6327HTSA1 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.A transition frequency of 125MHz is present in the part.A maximum collector current of 1A volts can be achieved.
BCP5310E6327HTSA1 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCP5310E6327HTSA1 Applications
There are a lot of Infineon Technologies BCP5310E6327HTSA1 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
