DSA2401R0L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
SOT-23
DSA2401R0L Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e6
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
HTS Code
8541.21.00.75
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
DSA2401
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
250MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
130 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 8mA, 400mA
Collector Emitter Breakdown Voltage
10V
Max Frequency
250MHz
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
10V
Collector Base Voltage (VCBO)
-15V
Emitter Base Voltage (VEBO)
-7V
hFE Min
130
Continuous Collector Current
-500mA
Height
1.1mm
Length
2.9mm
Width
1.5mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.21060
$0.6318
6,000
$0.19701
$1.18206
15,000
$0.18342
$2.7513
30,000
$0.18116
$5.4348
DSA2401R0L Product Details
DSA2401R0L Overview
In this device, the DC current gain is 130 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.When VCE saturation is 300mV @ 8mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).A -500mA continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.In the part, the transition frequency is 250MHz.Breakdown input voltage is 10V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
DSA2401R0L Features
the DC current gain for this device is 130 @ 500mA 2V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 300mV @ 8mA, 400mA the emitter base voltage is kept at -7V a transition frequency of 250MHz
DSA2401R0L Applications
There are a lot of Panasonic Electronic Components DSA2401R0L applications of single BJT transistors.