BCV49H6327XTSA1 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.Emitter base voltages of 10V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.As a result, it can handle voltages as low as 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BCV49H6327XTSA1 Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 150MHz

BCV49H6327XTSA1 Applications

There are a lot of Infineon Technologies BCV49H6327XTSA1 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver