TIP31ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
TIP31ATU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Transition Frequency
3MHz
Frequency - Transition
3MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.24000
$0.24
500
$0.2376
$118.8
1000
$0.2352
$235.2
1500
$0.2328
$349.2
2000
$0.2304
$460.8
2500
$0.228
$570
TIP31ATU Product Details
TIP31ATU Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.In the part, the transition frequency is 3MHz.The device exhibits a collector-emitter breakdown at 60V.
TIP31ATU Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A a transition frequency of 3MHz
TIP31ATU Applications
There are a lot of Rochester Electronics, LLC TIP31ATU applications of single BJT transistors.