MMBT2907ALT3G Overview

This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -600mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.Maximum collector currents can be below 600mA volts.

MMBT2907ALT3G Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

MMBT2907ALT3G Applications

There are a lot of ON Semiconductor MMBT2907ALT3G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter