2SD1801T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1801T-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case
TO-252-3
Number of Pins
3
Packaging
Bag
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Pin Count
3
Polarity
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
2A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
150MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.602385
$1.602385
10
$1.511684
$15.11684
100
$1.426117
$142.6117
500
$1.345394
$672.697
1000
$1.269240
$1269.24
2SD1801T-E Product Details
2SD1801T-E Overview
If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 2A volts.
2SD1801T-E Features
the emitter base voltage is kept at 6V a transition frequency of 150MHz
2SD1801T-E Applications
There are a lot of ON Semiconductor 2SD1801T-E applications of single BJT transistors.