MMBT3904,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
MMBT3904,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBT3904
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
200mV
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Ambient Temperature Range High
150°C
Turn Off Time-Max (toff)
250ns
Turn On Time-Max (ton)
70ns
Height
1.1mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.01876
$0.05628
6,000
$0.01709
$0.10254
15,000
$0.01508
$0.2262
30,000
$0.01374
$0.4122
75,000
$0.01240
$0.93
150,000
$0.01106
$1.659
MMBT3904,215 Product Details
MMBT3904,215 Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The part has a transition frequency of 300MHz.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3904,215 Features
the DC current gain for this device is 100 @ 10mA 1V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 6V a transition frequency of 300MHz
MMBT3904,215 Applications
There are a lot of Nexperia USA Inc. MMBT3904,215 applications of single BJT transistors.