2SD1781KT146Q Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 800mA.Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.150MHz is present in the transition frequency.A breakdown input voltage of 32V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2SD1781KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 150MHz
2SD1781KT146Q Applications
There are a lot of ROHM Semiconductor 2SD1781KT146Q applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
