BCX42E6327HTSA1 Overview
In this device, the DC current gain is 40 @ 200mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 900mV, it offers maximum design flexibility.A VCE saturation (Max) of 900mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).150MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 125V volts.During maximum operation, collector current can be as low as 800mA volts.
BCX42E6327HTSA1 Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 150MHz
BCX42E6327HTSA1 Applications
There are a lot of Infineon Technologies BCX42E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
