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BC846BLT1G

  • BC846BLT1G
  • BC846BLT1G

BC846BLT1G

BC846BLT1G

ON Semiconductor

BC846BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC846BLT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Type General Purpose
Subcategory Other Transistors
Voltage - Rated DC 65V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Noise Figure 10 dB
Height 940μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.16000 $0.16
500 $0.1584 $79.2
1000 $0.1568 $156.8
1500 $0.1552 $232.8
2000 $0.1536 $307.2
2500 $0.152 $380
BC846BLT1G Product Details

BC846BLT1G Description


The ON Semiconductor BC846BLT1G Transistor is a 65V NPN silicon Bipolar Transistor that is ideal for linear and switching applications. The device is appropriate for low-power surface-mount applications, ESD protection, polarity reversal protection, data line protection, inductive load protection, and steering logic.



BC846BLT1G Features


  • 6V Emitter to base voltage (VEBO)

  • 556°C/W Thermal resistance, junction to ambient

  • Halogen-free/BFR-free

  • ESD rating - >4000V human body model, >400V machine model

  • 80V Collector to base voltage (VCBO)



BC846BLT1G Applications


  • Industrial

  • Power Management

  • Safety


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