ZXTN25012EZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZXTN25012EZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
130.492855mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
4.46W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
260MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN25012E
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
4.46W
Case Connection
COLLECTOR
Power - Max
2.4W
Transistor Application
SWITCHING
Gain Bandwidth Product
260MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
6.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
270mV @ 130mA, 6.5A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
260MHz
Collector Emitter Saturation Voltage
38mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
6.5A
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.925638
$1.925638
10
$1.816640
$18.1664
100
$1.713811
$171.3811
500
$1.616803
$808.4015
1000
$1.525286
$1525.286
ZXTN25012EZTA Product Details
ZXTN25012EZTA Overview
This device has a DC current gain of 500 @ 10mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 38mV allows maximum design flexibility.When VCE saturation is 270mV @ 130mA, 6.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 6.5A for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.In the part, the transition frequency is 260MHz.Breakdown input voltage is 12V volts.A maximum collector current of 6.5A volts is possible.
ZXTN25012EZTA Features
the DC current gain for this device is 500 @ 10mA 2V a collector emitter saturation voltage of 38mV the vce saturation(Max) is 270mV @ 130mA, 6.5A the emitter base voltage is kept at 7V a transition frequency of 260MHz
ZXTN25012EZTA Applications
There are a lot of Diodes Incorporated ZXTN25012EZTA applications of single BJT transistors.