ZXTN25012EZTA Overview

This device has a DC current gain of 500 @ 10mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 38mV allows maximum design flexibility.When VCE saturation is 270mV @ 130mA, 6.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 6.5A for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.In the part, the transition frequency is 260MHz.Breakdown input voltage is 12V volts.A maximum collector current of 6.5A volts is possible.

ZXTN25012EZTA Features

the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 38mV
the vce saturation(Max) is 270mV @ 130mA, 6.5A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz

ZXTN25012EZTA Applications

There are a lot of Diodes Incorporated ZXTN25012EZTA applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver