BCP53-10,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCP53-10,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
145MHz
Base Part Number
BCP53
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
145MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
145MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
63
Height
1.7mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.199680
$0.19968
10
$0.188377
$1.88377
100
$0.177714
$17.7714
500
$0.167655
$83.8275
1000
$0.158165
$158.165
BCP53-10,115 Product Details
BCP53-10,115 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Parts of this part have transition frequencies of 145MHz.There is a breakdown input voltage of 80V volts that it can take.In extreme cases, the collector current can be as low as 1A volts.
BCP53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 145MHz
BCP53-10,115 Applications
There are a lot of Nexperia USA Inc. BCP53-10,115 applications of single BJT transistors.