BCP53-10,115 Overview

This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Parts of this part have transition frequencies of 145MHz.There is a breakdown input voltage of 80V volts that it can take.In extreme cases, the collector current can be as low as 1A volts.

BCP53-10,115 Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz

BCP53-10,115 Applications

There are a lot of Nexperia USA Inc. BCP53-10,115 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter